FDMS3016DC n-channel dual cool tm powertrench ? mosfet ?2010 fairchild semiconductor corporation FDMS3016DC rev.c www.fairchildsemi.com 1 july 2010 FDMS3016DC n-channel dual cool tm powertrench ? mosfet 30 v, 49 a, 6.0 m features ? dual cool tm top side cooling pqfn package ? max r ds(on) = 6.0 m at v gs = 10 v, i d = 12 a ? max r ds(on) = 9.0 m at v gs = 4.5 v, i d = 10 a ? high performance technology for extremely low r ds(on) ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced powertrench ? process. advancements in both silicon and dual cool tm package technologies have been combined to offer the lowest r ds(on) while maintaining excellent swit ching performance by extremely low junction-to-ambient thermal resistance. applications ? synchronous rectifier for dc/dc converters ? telecom secondary side rectification ? high end server/workstation mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25 c 49 a -continuous (silicon limited) t c = 25 c 78 -continuous t a = 25 c (note 1a) 18 -pulsed 200 e as single pulse avalanche energy (note 3) 72 mj dv/dt peak diode recovery dv/dt (note 4) 1.3 v/ns p d power dissipation t c = 25 c 60 w power dissipation t a = 25 c (note 1a) 3.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (top source) 5.7 c/w r jc thermal resistance, junction to case (bottom drain) 2.1 r ja thermal resistance, junction to ambient (note 1a) 38 r ja thermal resistance, junction to ambient (note 1b) 81 r ja thermal resistance, junction to ambient (note 1i) 16 r ja thermal resistance, junction to ambient (note 1j) 23 r ja thermal resistance, junction to ambient (note 1k) 11 device marking device package reel size tape width quantity 3016 FDMS3016DC dual cool tm power 56 13?? 12 mm 3000 units bottom top pin 1 d d d d g s s s power 56 g s s s d d d d 5 6 7 8 3 2 1 4
FDMS3016DC n-channel dual cool tm powertrench ? mosfet www.fairchildsemi.com 2 ?2010 fairchild semiconductor corporation FDMS3016DC rev.c electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 17 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 1.9 3.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -6 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 12 a 5.0 6.0 m v gs = 4.5 v, i d = 10 a 7.0 9.0 v gs = 10 v, i d = 12 a, t j = 125 c 7.5 9.4 g fs forward transconductance v ds = 5 v, i d = 12 a 44 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 1038 1385 pf c oss output capacitance 513 685 pf c rss reverse transfer capacitance 87 135 pf r g gate resistance 0.9 t d(on) turn-on delay time v dd = 15 v, i d = 12 a, v gs = 10 v, r gen = 6 918ns t r rise time 310ns t d(off) turn-off delay time 19 35 ns t f fall time 210ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 12 a 16 23 nc q g total gate charge v gs = 0 v to 4.5 v 7.6 10.6 nc q gs gate to source gate charge 3 nc q gd gate to drain ?miller? charge 2.5 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 12 a (note 2) 0.82 1.3 v v gs = 0 v, i s = 1.9 a (note 2) 0.73 1.2 t rr reverse recovery time i f = 12 a, di/dt = 100 a/ s 25 45 ns q rr reverse recovery charge 9 18 nc
FDMS3016DC n-channel dual cool tm powertrench ? mosfet www.fairchildsemi.com 3 ?2010 fairchild semiconductor corporation FDMS3016DC rev.c thermal characteristics r t jc thermal resistance, junction to case (top source) 5.7 c/w r t jc thermal resistance, junction to case (bottom drain) 2.1 r t ja thermal resistance, junction to ambient (note 1a) 38 r t ja thermal resistance, junction to ambient (note 1b) 81 r t ja thermal resistance, junction to ambient (note 1c) 27 r t ja thermal resistance, junction to ambient (note 1d) 34 r t ja thermal resistance, junction to ambient (note 1e) 16 r t ja thermal resistance, junction to ambient (note 1f) 19 r t ja thermal resistance, junction to ambient (note 1g) 26 r t ja thermal resistance, junction to ambient (note 1h) 61 r t ja thermal resistance, junction to ambient (note 1i) 16 r t ja thermal resistance, junction to ambient (note 1j) 23 r t ja thermal resistance, junction to ambient (note 1k) 11 r t ja thermal resistance, junction to ambient (note 1l) 13 notes: 1. r t ja is determined with the device mounted on a fr-4 board using a specified pad of 2 oz copper as shown below. r t jc is guaranteed by design while r t ca is determined by the user's board design. c. still air, 20.9x10.4x12.7mm aluminum heat sink, 1 in 2 pad of 2 oz copper d. still air, 20.9x10.4x12.7mm aluminum heat sink, minimum pad of 2 oz copper e. still air, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, 1 in 2 pad of 2 oz copper f. still air, 45.2x41.4x11.7mm aavid thermallo y part # 10-l41b-11 heat sink, minimum pad of 2 oz copper g. 200fpm airflow, no heat sink,1 in 2 pad of 2 oz copper h. 200fpm airflow, no heat sink, minimum pad of 2 oz copper i. 200fpm airflow, 20 .9x10.4x12.7mm aluminum heat sink, 1 in 2 pad of 2 oz copper j. 200fpm airflow, 20.9x10.4x12.7mm aluminum heat sink, minimum pad of 2 oz copper k. 200fpm airflow, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, 1 in 2 pad of 2 oz copper l. 200fpm airflow, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, minimum pad of 2 oz copper 2. pulse test: pulse width < 300 p s, duty cycle < 2.0%. 3. e as of 72 mj is based on starting t j = 25 c, l = 1 mh, i as = 12 a, v dd = 27 v, v gs = 10 v. 4. i sd d 12 a, di/dt d 100 a/ p s, v dd d bv dss , starting t j = 25 o c. a. 38 c/w when mounted on a 1 in 2 pad of 2 oz copper b. 81 c/w when mounted on a minimum pad of 2 oz copper
www.fairchildsemi.com 4 typical characteristics t j = 25c unless otherwise noted figure 1. 012345 0 10 20 30 40 50 v gs = 3v v gs = 4.5v v gs = 3.5v pulse duration = 80 s duty cycle = 0.5%max v gs = 4v v gs = 10v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 1020304050 0 1 2 3 4 5 6 v gs =10v pulse duration = 80 s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 4v v gs = 3.5v v gs = 3v v gs = 4.5v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 12a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 10 20 30 40 50 i d = 12a t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m ) pulse duration = 80 s duty cycle = 0.5%max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 10 20 30 40 50 t j = 25 o c t j = -55 o c v ds = 5v pulse duration = 80 s duty cycle = 0.5%max t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 50 s o u r c e t o d r a i n d i o d e forward voltage vs source current ?20 10 fairchild semiconductor corporation FDMS3016DC rev.c FDMS3016DC n-channel dual cool tm power trench ? mosfet
www.fairchildsemi.com 5 figure 7. 0 3 6 9 12 15 18 0 2 4 6 8 10 i d = 12a v dd = 20v v dd = 10v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 15v gate charge characteristics figure 8. 0.1 1 10 30 30 100 1000 3000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 30 10 u n c l a m p e d i n d u c t i v e switching capability figure 10. m a x i m u m c o n t i n u o u s d r a i n c u r r e n t v s c a s e t e m p e r a t u r e figure 11. fo rw ard bi as safe operating area figu re 12. s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted ?20 10 fairchild semiconductor corporation FDMS3016DC rev.c FDMS3016DC n-channel dual cool tm power trench ? mosfet 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 500 100 us dc 100 ms 10 ms 1 ms 1 s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds ( on ) single pulse t j = max rated r ja = 81 o c/w t a = 25 o c 10 s 200 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 2000 p (pk) , peak transient power (w) single pulse r ja = 81 o c/w t a = 25 o c t, pulse width (sec) 25 50 75 100 125 150 0 20 40 60 80 v gs = 4.5 v r jc = 2.1 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) limited by package
www.fairchildsemi.com 6 typical characteristics t j = 25c unless otherwise noted ?20 10 fairchild semiconductor corporation FDMS3016DC rev.c FDMS3016DC n-channel dual cool tm power trench ? mosfet figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.0005 0.001 0.01 0.1 1 2 single pulse r ja = 81 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a
FDMS3016DC n-channel dual cool tm powertrench ? mosfet www.fairchildsemi.com 4 ?2010 fairchild semiconductor corporation FDMS3016DC rev.c dimensional outline and pad layout
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